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Traps characterization in AlGaN/GaN HEMTs by means of Drain Current Transient Measurements
Traps characterization in AlGaN/GaN HEMTs by means of Drain Current Transient Measurements
2012
Fabio Soci
Alessandro Chini
F. Fantini
A. Nanni
A. Pantellini
C. Lanzieri
Davide Bisi
Gaudenzio Meneghesso
Enrico Zanoni
Keywords:
Gallium nitride
Electronic engineering
Materials science
algan gan
Optoelectronics
drain current
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