Compressive thermal stress and microstructure-driven charge carrier transport in silicon oxycarbide thin films

Abstract This work correlates the charge carrier transport mechanism of silicon oxycarbide-based thin films with their morphology and thermal stress. Segregation of highly-graphitized carbon-rich, oxygen-depleted C/SiC areas homogeneously dispersed within an oxygen-rich C/SiOC matrix was seen on the 500 nm-SiOC thin films. Compressive biaxial stress induced by the mismatch with the Si-substrate thermal expansion coefficient was calculated at 109 MPa. Through Hall measurements, p-type carriers were shown dominating the SiOC film similar to monolithic samples. Thin films and monoliths have comparable carrier concentrations while the carrier mobility in SiOC thin films was 2 magnitudes higher than that of monolithic samples and is considered a consequence of the compressive thermal stress acting on the film. Improved conductivity of 16 S cm -1 is measured for the SiOC thin film sample which is assumed considering the enhanced carrier mobility alongside the reduced percolation threshold ascribed to the phase-separated morphology of the thin film.