Confined epitaxial growth by low-pressure chemical vapor deposition

Confined and unconfined selective epitaxial growth using SiH4 and a novel DCS/SiH4/H2 mixture by low-pressure chemical vapor deposition (LPCVD) have been studied. Results indicate that DCS/SiH4/H2 growth with a DCS/H2 prebake provides a very suitable process for confined growth, providing both good epitaxial quality and selectivity. Results also show that unconfined and confined growth using the DCS/SiH4/H2 process gives similar growth in terms of growth rate and faceting. Thickness uniformity was also found to be good in areas away from the wafer edge, and no loading effects were observed.