FIRST RESULTS OF SILICON PHOTOMULTIPLIER STUDY PERFORMED AT THE UNIVERSITY "LA SAPIENZA" OF ROME

2008 
Our first results on Silicon Photo-Multiplier (SiPM) properties study are presented. The reported measurements allowed us to develop and tune both the setup and the measurement analysis procedures. The current-voltage (I-V) characterization and the response to low-intensity light were studied on samples produced by CPTA (Russia), Hamamatsu (Japan), ITC-irst (Italy) and SensL (Ireland). Limitations of our present setup and the underway improvements in our laboratory are discussed in order to add also the Photon Detection Efficiency (PDE) in the qualification parameters of diverse samples of SiPM available on market.
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