The semiconductor light emitting device and its manufacturing method and a semiconductor light emitting device

A light emitting element comprises a GaP substrate and a mesa portion. The GaP substrate includes a major surface inclined to the direction from the {100} plane and a side surface covered with inequalities substantially. The mesa portion has a light emitting multi-layer of InGaAlP based material provided on the major surface. A part of a light emitted from the light emitting multi-layer is extracted through the side surface of the GaP substrate.