Effect of AlN intermediate layer on growing GaN film by hydride vapor phase epitaxy

Abstract Thick GaN layer deposited by hydride vapor phase epitaxy (HVPE) on a metalorganic chemical vapor deposition (MOCVD) GaN template with a thin low temperature (LT) AIN intermediate layer was investigated. High resolution X-ray resolution diffraction (HRXRD) shows that the crystalline quality of thick GaN layer was improved compared with the template. As confirmed by atomic force microscopy (AFM) observations, the surface morphology of AIN intermediate layer helps to improve the nucleation of GaN epilayer. Photoluminescence (PL) spectra measurement shows its high optical quality and low compressive stress, and micro Raman measurement confirms the latter result. Thus, the deposition of the LT-AIN interlayer has promoted the growth of an HVPE-GaN layer with an excellent crystalline quality.