Doping of crystalline silicon solar cell by making use of atmospheric and sub-atmospheric plasma jet

Summary form only given. The doping process in the manufacturing of solar cell is to form a p-n junction by the injection of impurity materials into a silicon wafer. The elements of III or V group are used in the doping process during which the dopant materials are diffused thermally into the doping layer. In the conventional process of doping, the furnace or the laser is used with the control of temperature in the doping equipment.