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(Al-In-Ga)As pHEMT-Heterostructures Grown by the Method of Metalorganic Vapour Phase Epitaxy
(Al-In-Ga)As pHEMT-Heterostructures Grown by the Method of Metalorganic Vapour Phase Epitaxy
2017
M. V. Revin
E.A. Koblov
D. S. Smotrin
V. A. Ivanov
A. P. Kotkov
V. M. Daniltsev
O. I. Khrykin
P. A. Yunin
L. D. Moldavskaya
V. I. Shashkin
Keywords:
Heterojunction
Metalorganic vapour phase epitaxy
Analytical chemistry
High-electron-mobility transistor
Materials science
Optoelectronics
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