Kinetics of processes in the Ti–Si1−xGex systems

The kinetics of processes related to the formation of C49 and C54 Ti(Si1−yGey)2 germanosilicide phases in the two relaxed and strained Ti/Si1−xGex systems (x1=0.35 and x2=0.20) in the temperature range 600–800 °C are considered. These processes have been studied through Auger electron spectroscopy, secondary ion mass spectroscopy, x‐ray diffraction, and Raman scattering spectroscopy supported by ion beam etching techniques. Si/Ge ‘‘intergrain’’ alloy has been found between the grains of the C49 or/and C54 phases, with a Ge‐rich part Si1−zGez of z=2x–3x in the upper region. At higher temperatures, the Ge concentration in the Ge‐rich alloy decreases and its volume increases. The temperature required for obtaining similar changes are higher when x2related model is proposed to explain the observed phenomena.