Combined wafer manufacturing technology with laser treatment and temperature-induced voltages

The present invention relates to a method of manufacturing solid state layers. The process of the invention preferably comprises at least the steps of: providing a solid body (2) for separating at least one solid layer (4), producing defects by means of radiation of at least one radiation source (18), particularly a laser, in the internal structure of the solid body for setting a transfer level (8) is separated along the solid layer (4) from the fixed body (2), separating the solid layer (4) of the fixed body (2) by means of a along the transfer plane (8) guided tear, whereby the fixed body (2) a surface is exposed, and on the solid layer, a surface is exposed, wherein, after separation of the solid layer (4) by means of a tempering unit, a radiation treatment for smoothing the surface structure of the exposed surface of the separated solid layer (4) and / or the exposed surface of the solid body (2) is carried out.