Impact of Low-Temperature Coolcube™ Process on the Performance of FDSOI Tunnel FETs

Tunnel FETs fabricated using the low-temperature Cool Cube TM process are compared with devices made with standard high-temperature (HT) technology. Charge pumping (CP) and low-frequency noise (LFN) measurements were performed to evaluate the impact of low-temperature (LT) process on the device performance. LT devices feature a higher density of source/drain junction defects, due to lower thermal budget, causing higher levels of LFN. These defects enhance the trap-assisted tunneling (TAT) current which is further amplified by the more abrupt junctions obtained using LT processing.