Pixel structure and method for fabricating the pixel structure

The present invention discloses a pixel structure and its manufacturing method. The pixel structure includes an active element, a gate insulating layer, a dielectric insulating layer, a capacitor electrode, a protective layer, and a pixel electrode. Active element includes a gate electrode, a semiconductor channel layer, a source and a drain. Dielectric insulating layer covering the semiconductor channel layer, the dielectric constant of the dielectric insulating layer is higher than the dielectric constant of the gate insulating layer. Capacitor electrode overlaps the drain electrode to the capacitor, a drain and sandwiched between two dielectric insulating layer constitute a storage capacitor structure. The protective layer disposed on the dielectric insulating layer and the capacitance electrode is located between the protective layer and the dielectric insulating layer. Pixel electrodes arranged on and connected to the drain of active device on the protective layer. The pixel structure according to the present invention does not need a large area of ​​the capacitor electrode to have a sufficient storage capacitance value, and help to improve the aperture ratio of the pixel structure.