Synthesis and characterization of ZnSxSe1-x films using Brush plating technique

Abstract ZnS x Se 1-x films possess several interesting properties making them suitable for use in optoelectronic and optical applications. In this investigation, thin ZnS x Se 1-x films were deposited for the first time by the brush plating technique. Thin films of ZnSxSe 1-x were deposited at a constant current density of 80 mA cm -2 on titanium and conducting glass substrates at different temperatures in the range of 30 - 80°C. The precursors used were AR grade ZnSO 4 , sodium thiosulphate and sodium selenosulphate. XRD patterns of the films of different composition deposited at different temperatures exhibited hexagonal structure. An absorption coefficient of 10 4 cm -1 was observed. Extrapolation of the linear region to the hν axis yields the band gap in the range of 2.64 – 3.58 eV for the films deposited at different temperatures. EDAX study indicated that the composition of the films obtained were nearly equal to the composition of the precursors taken for deposition. X-ray photoelectron spectroscopy studies on the films of different composition deposited at 80°C. showed the spectra of Zn (2p), Se (3p 1/2 and 3p 3/2 ) and S (2p) levels. Atomic force microscope studies indicated that the surface roughness of the films increase from 1.04 – 5.45 nm as the ZnSe concentration increased. The grain size increases from 15 nm – 40 nm as the concentration of ZnSe increased.