Collecting Si-probes for investigation of deuterium fluxes and energies in the tokamak scrape-off-layer

Abstract The method of collecting Si-probes has been further developed and used for determination of deuterium fluxes and energy in the SOL of T-10. SIMS and RHEED were used for probe analysis after exposure. Experiments in which the Si-samples were exposed to monoenergetic D 2 + -ions ( E D = 20–1000 eV, Φ = 10 15 –10 19 cm −2 ) enabled calibration of the method. In addition, numerical calculations have been performed to simulate the implantation of deuterium with monoenergetic and Maxwellian energy distributions into amorphous silicon. The deuterium energy was estimated from the saturation level of the trapped deuterium, from radiation defects and also from the implantation depth. The deuterium fluxes were estimated from the linear part of the trapping curve. The parallel energy of the D + -ions in the SOL of T-10 is found to be 50–80 eV which is much higher than the measured electron temperature at the same radius. Longitudinal fluxes of (0.5–2.0) × 10 17 cm −2 s −1 have been measured. The energy of the deuterium neutrals was measured to be 70–100 eV and their flux in the range (2–3) × 10 16 cm −2 s −1 .