Development of broadband amplifier based on GaN HEMTs

Two types of broadband amplifier based on GaN HEMTs are presented in this paper. The feedback amplifier design has achieved over 42 dB gain with ± 1.75 dB flatness and higher than 32 dBm P 1dB over 30 MHz to 4 GHz. Both theoretical predictions and measurement results will be presented. This PA was designed and fabricated using discrete GaN transistor die with chip & wire technology. The distributed amplifier design is optimized to achieve greater than 38 dBm of P 1dB output power with higher than 15 dB linear gain, while having good port match and better than ± 1 dB gain flatness over 20 MHz to 6 GHz.