Morphology and thermal stability of Ti-doped copper nitride films

A weakly Ti-doped copper nitride (Cu3N) film was prepared by cylindrical magnetron sputtering. The XPS results indicate that Ti atoms do not substitute for the Cu atoms but probably locate at the grain boundaries. The columnar grains size is about half of that of the undoped Cu3N film and the surface is smoother. For weakly Ti-doped Cu3N films, a dense layer appears on top of the columnar crystals. The RMS of the Cu film formed by annealing of the weakly Ti-doped Cu3N film is more than twice larger than that of the film before annealing. Compared with the undoped Cu3N film, it possesses fine thermal stability both in vacuum and in atmosphere.