Hall coefficient and Hall mobility in the variable range hopping conduction regime in n-type CuInSe2

Abstract The electrical conductivity ρ and Hall coefficient R H are measured on a n-type CuInSe 2 sample that has dopant concentration n below critical concentration n c of the metal-insulator transition. Mott type variable range hopping conduction of between 4 and 20 K is observed at several fixed magnetic fields B up to 1.5 T. The effect of the magnetic field on Hall coefficient and Hall mobility μ H is also studied. It is found that temperature dependence of μ H is in agreement with the Hall effect theory for hopping conduction.