A New Technique for the Evaluation of the Parameters of GaAlAsSb(p)/GaAlAsSb(n)/InAsSb Double Interface from Current-Voltage Curve Analysis

Parameters characterizing a p-n junction based device like ideality factor n, saturation current Is, shunt resistance Rsh and series resistance Rs are very important since they can give a first idea on conduction processes occurring across the interface of the junction. They also inform about the device performances and the possibilities to optimize them. For a good understanding of the device operation and its performances, these parameters are to be determined as precisely as possible. In this work, a new and simple method is proposed for the analysis the current-voltage (I-V) characteristic of a p-n junction diode. The method involves performing a mathematical operation on the experimental data that allows to calculate the parameters at values of forward current smaller than the reverse saturation current, is firstly applied to a simulated p-n diode. This technique was applied successfully to a heterojunction using antimonide semiconductors and the results were compared to those obtained by using two other methods encountered in the literature.