Reliability of Dual Damascene TSV for high density integration: The electromigration issue

This paper deals with electromigration tests on Dual Damascene TSV, a low-cost TSV process. Up- and down-stream stress configurations are investigated and we demonstrate the independence of the failure's localization with the electron flow direction. Thus, unlike the standard (single damascene) TSV process, the failure (copper depletion) location is always located inside the metal level directly below the TSV. A limited number of simple design rules may be used in order to ensure reliability requirements.