High-frequency noise measurements on MOSFETs with channel-lengths in sub-100 nm regime

High-Frequency signal and noise measurements on 40 nm, 80 nm, and 110 nm, gate-length MOS transistors are performed. On-wafer measurements of S-parameters up to 18 GHz yield an accurate small-signal RF device model with g 2 in excess of 1000 mS/mm. Noise contributions due to gate resistance, substrate resistance, source and drain resistances, substrate current and induced-gate noise are found to be small in comparison with total observed noise. The noise parameter γ is bias dependent and increases as channel-length decreases. The observed values are well above the ideal value of 2/3 consistent with previously published results.