Accelerated Publication: Correlation between the stability and trap parameters of amorphous oxide thin film transistors

We report on the temperature dependence phenomena in stability and trap related parameters in amorphous-hafnium-indium-zinc-oxide (a-HIZO) thin film transistors (TFTs) with different Hf-ratio. The optimized 7HIZO TFT shows large @m"F"E of >11.1cm^2/Vs and good stability based in large falling-rate (R"F) of 0.18eV/V, trapping-time (@t) of 1.0x10^7s and small subthreshold-swing (SS) of 0.74V/dec. Relation between thermally activated energy and Hf-ratio clearly indicated Hf acted as carrier suppressors since the increase of Hf-ratio in a-HIZO films. The Hf greatly affected the overall device performance as well as the stability.