Fractal Growth of Clusters and Pores During Annealing of Aluminum Thin Films Deposited on Silica.
1995
Annealing of an Al thin-film on SiO2 at temperatures in the range 400-660°C leads to a chemical reaction (oxidation of Al and reduction of Si) whih proceeds via irreversible growth of 2-D aggregates which belong to a class of clusters first described in MBE.
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