ITO/Homoepitaxial ZnSe/ITO MSM Sensors With Thermal Annealing

Indium-tin-oxide/homoepitaxial ZnSe/indium-tin-oxide metal-semiconductor-metal ultraviolet/blue sensors were prepared on the ZnSe substrates. It was found that the Schottky-barrier height became larger and the interface state density became smaller after annealing. With an incident wavelength of 448 nm and an applied bias of 1 V, it was found that the responsivities for the sensors with and without thermal annealing were 0.15 and 0.12 A/W, which corresponds to the quantum efficiencies of 40% and 33.5%, respectively. Furthermore, it was found that the sensors with a smaller noise equivalent power and larger detectivity can be achieved by annealing