Time-Dependent Single-Event Effects in CMOS LC-oscillators

This paper presents a general theory of time-dependent Single-Event Effects in CMOS LC-oscillators. The analysis employs the oscillator’s Impulse Sensitive Function (ISF) to calculate the effect of a transient current due to an ionizing particle. A discussion is made on the dependence of the maximum junction collection current and the modulation of this current with the VCO signal waveform, supported by TCAD simulations. An experimental study using a Two Photon Absorption (TPA) laser setup is performed to obtain accurate measurements of the time-dependent charge-to-phase transfer function of the oscillator.