Preparation method and application of photoelectrochemical sensor for sensitively detecting Cd based on ZnO and CdS compound semiconductor material

The invention belongs to the field of functional nano materials, sensing analysis and environment analysis, and provides a preparation method and application of a photoelectrochemical sensor for sensitively detecting Cd based on a ZnO and CdS compound semiconductor material. The preparation method comprises the steps of based on an ITO electrode as a substrate, inoculating ZnO seed crystal to the ITO electrode, and depositing CdS on the ITO electrode having crystallized ZnO through an electro-deposition method based on NaS2SO3 as a sulfur source, Cd in an environment sample as a cadmium source and EDTA as a stabilizing agent, so that the photoelectric signal is greatly enhanced, the detection range is 0.01-5.0mmol/L, and the detection limit is 5micromol/L.