Radiative characteristics of semiconductor injection lasers based on narrow asymmetric waveguides

Quantum well InGaAs/GaAs lasers based on narrow asymmetric waveguide were created and investigated in pulse and CW modes. Broad-area 50μm stripe lasers showed internal quantum efficiency as high as 95%, threshold current density as low as 160 A/cm2. Wall-plug efficiency in CW mode reached the value of 75%. The obtained parameters make the concept of narrow asymmetric waveguide promising for high-power laser diodes.