A new on-chip sensor design for NBTI using slew rate monitoring
2013
In this paper, an on-chip NBTI sensor based on rise transition time dierence
measurement of inverter is proposed. This sensor supports both AC and DC stress mode
with very short measurement time of 50 nsec. The new sensor, with direct correlation
between Vth degradation and its output voltage change, has a resolution of 1 mV per
0.5 mV threshold voltage shift. Dierential structure of the sensor eliminates the eect of
common-mode environmental variation such as temperature. A 65 nm CMOS technology
model is used for simulation of the sensor. The average power consumption of this sensor is
0.14 W in stress mode and 4.54 W during measurement mode. The implemented layout
area is 98.9 m2.
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