Reduced Leakage CPW Interconnect and Schottky Diodes on SiO2-High Resistivity Silicon Substrate

In this paper a novel implanted Schottky diode is designed. The diode and it's CPW interconnect have localized SiO2 insulation barriers included. These are shown to help reduce the substrate leakage current that acts in parallel with the diode. Also, the SiO2 barriers reduce diode shot noise hence improve detection performance. Experimental evidence is given in order to justify these claims.