Growth of thick and heavily boron-doped (113)-oriented CVD diamond films

Abstract Diamond as a wide band-gap semiconductor exhibits unrivalled figures of merit for power electronics. However this application has been held back by the poor availability of thick large-area electrically-conductive diamond material that is a prerequisite for developing elemental devices. Efforts have been devoted to optimizing CVD growth and doping on conventional (100) and more rarely (111) crystal orientations but (113) has yet almost never been considered. In this work we report the growth of thick CVD diamond films on (113)-oriented substrates with various boron doping levels. We found that high-quality films can be obtained on this orientation with a 5-times improved doping efficiency as compared to (100). A thick freestanding CVD plate with a low resistivity and a doping level of 4 × 10 20  cm − 3 is demonstrated which paves the way to the fabrication of efficient Schottky diodes based on this orientation.