High-density (4.4F/sup 2/) NAND flash technology using Super-Shallow Channel Profile (SSCP) engineering

This paper describes a novel high-density 4.4F/sup 2/ (F: feature size) NAND flash memory with the cell size of 0.074 um/sup 2/ for 0.13 um design rule. To minimize the cell size, two key technologies are introduced as follows. (1) The Super-Shallow Channel Profile (SSCP) engineering and (2) a novel layout of the NAND string that consists of 32 cells. The NAND cells fabricated by the above technologies have demonstrated good cell characteristics. This 4.4F/sup 2/ NAND flash technology is highly advantageous for low cost flash memories of 4 Gbit and beyond for mass storage applications.