Microprobe Analysis Of Pt Films Deposited By Beam Induced Reaction

The localized Pt deposition by 30 keV Ga+ focused ion beam (FIB) or 10 keV electron beam (EB) induced reaction has been investigated using micro-RBS spectra and RBS mapping images by a 300 keV Be2+ microprobe with a beam spot size of 80 nm. The amount of Pt atoms increased with increasing ion dose due to the decomposition of precursor gas for FIB irradiation. Residual Ga atoms were found to be distributed at and near within 1.5 µm the deposited area due to the implantation from the Ga FIB and redeposition from the processed area, while low-Z elements such as C and O distributed at and around the processed areas by about 10 µm due to the adsorbed molecules of precursor gas after FIB processing. Micro-RBS spectra for EB induced deposited area show that the thickness of Pt layer is considerably less than that obtained by FIB due to the reduced deposition rate and the amount of Pt atoms at the boundary area was also less than that obtained by FIB, since the intensity profile of the electron beam was much shallower than that of FIB.