Variability analysis - prediction method for nanoscale triple gate FinFETs

Our analytical compact model for the drain of undoped or lightly doped nanoscale FinFETs has been expanded in order to predict and decompose variability in the electrical characteristics of FinFETs. The model has been evaluated by comparison to TCAD simulated devices with predefined variability. Successful application to experimental data of FinFETs with fin width W fin = 15 nm, gate length L G =30 nm, equivalent gate oxide thickness t ox = 1.7 nm and fin height H fin = 65 nm, has attributed their behavior to geometrical variations (σL G = 3.85 nm, σW fin = 1.80 nm) and variability in the metal gate work function (σΦ m = 48.1 eV).