High power, reliable 645 nm compressively strained GaInP/GaAlInP laser diodes
1994
CW output powers in excess of 1 W and reliable CW output powers of 250 mW at room temperature from double quantum well compressively strained GaInP/GaAlInP laser diodes with an emission wavelength of 645 nm were demonstrated. An anomalous dependence of threshold current density and wavelength on GaInP/GaAlInP laser diode stripe width was characterised.
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