Гетероструктуры на основе нитрида галлия на подложках кремния для мощных СВЧ-транзисторов

Unique approach for the formation of GaN heterostructures on silicon substrates at low growth temperatures (less than 950°C) has been proposed. The heterostructure has an atomically smooth surface with a root mean square roughness of 0.45 nm and high crystalline quality. The average sheet resistance of the 2D electron gas was 415 Ohm/square with electron concentration of 1.65·10 13 cm -2 and mobility of 920 cm 2 /V·s. The maximum of the drain saturation current for transistors with a gate width of 1.2 mm was 930 mA/mm, which corresponds to the best world results for gallium nitride transistors on silicon substrates.