Coexistence of spin Hall magnetoresistance and anomalous Hall effect in antiferromagnetic Cr2O3/Ta bilayer

The spin Hall magnetoresistance (SMR) and anomalous Hall effect (AHE) were observed in a Cr2O3/Ta structure. The structural and surface morphology of Cr2O3/Ta structure have been carried out. Temperature dependence of longitudinal and transverse resistances measurements confirmed the relationship between SMR and AHE signals. By means of angle-dependent magnetoresistance measurements, the physical origins of SMR and AHE in the Cr2O3/Ta structure were revealed. The so-called boundary magnetization in Cr2O3 film due to its bulk antiferromagnetic order are responsible for the coexistence of SMR and AHE in the Cr2O3/Ta structure.