Preparation method of SiGe-based plasma pin diode for multi-layer holographic antenna

The invention discloses a preparation method of a SiGe-based plasma pin diode for a multi-layer holographic antenna. The preparation method of the SiGe-based plasma pin diode for the reconfigurable multi-layer holographic antenna comprises the steps of arranging an isolation region in a SiGeOI semiconductor substrate; etching the SiGeOI substrate to form a P-type groove and an N-type groove, wherein the depths of the P-type groove and the N-type groove are smaller than the thickness of top-layer SiGe of the SiGeOI substrate; forming a first P-type active region and a first N-type active region in the P-type groove and the N-type groove by adopting ion implantation; filling the P-type groove and the N-type groove and forming a second P-type active region and a second N-type active region in the top-layer SiGe of the SiGeOI substrate by adopting ion implantation; generating silicon dioxide on the SiGeOI substrate; activating impurities in the active regions; photoetching lead holes in a P-type contact region and an N-type contact region to form leads; and carrying out passivating treatment and photoetching a PAD to complete preparation of the SiGe-based plasma pin diode.