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Normally-off mode AlGaN/GaN HEMTs with p-InGaN Cap Layer
Normally-off mode AlGaN/GaN HEMTs with p-InGaN Cap Layer
2008
Li Xu
Kurouchi Masahito
Kishimoto Shigeru
Mizutani Takashi
Nakamura Fumihiko
Keywords:
Materials science
gate leakage current
algan gan
Optoelectronics
normally off
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