Low dose layer splitting for SOI preparation

Summary form only given. Semiconductor-on-insulator (SOI) substrates are in increasing demand for many applications including low voltage, low power, RF/microwave wireless mobile computer and communication systems. High quality Si, SiC and GaAs on insulator materials have been realized by wafer bonding and H-implanted layer splitting (Jalaguier et al. 1998). Typically, a high hydrogen dose in the 5/spl times/10/sup 16/ to 1/spl times/10/sup 17/ H ions/cm/sup 2/ range is used for implantation to achieve layer splitting. For mass production of SOI materials, the fabrication cost is one of the main challenges. A reduction of hydrogen dose is essential not only for cost-effectiveness but also for a lower defect density in the split layers. We have found that implantation of a small dose of B prior to H implantation, with the two ion profile peaks aligned, can significantly lower the blistering temperature. At a fixed splitting temperature, it implies a reduction of the required H dose for layer splitting. The B+H co-implant method has been found to work not only for Si but also for SiC, Ge and GaAs.