X-TEM investigation of the Al-QC layer system developed at various Mn deposition rates

Abstract The effects of Mn deposition rate on the evolution of the icosahedral quasi-crystalline phase were studied in the case of high temperature sequential vapour deposition (HTSD) of Al and Mn. By increasing the Mn deposition rates at 250°C, the deposition results in the sequential formation of QC and a metallic Mn layer. Sources of Al diffusion with different activity have been detected which correspond to the defects (grain boundaries, dislocations) and are the sites where the voids develop in the host Al films when preparing thick (some 100 nm thick) QC films. These results support the nucleation-growth-coalescence-thickness growth model proposed for the description of the formation of QC films at HTSD preparation [P B Barna et al, Thin Solid Films, 193–194 , 1 (1990)].