Fast-response X-ray detector based on nanocrystalline Ga2O3 thin film prepared at room temperature

Abstract X-ray detectors have broad applications in the fields of medical imaging, security checks, industrial inspections, and scientific research. However, it is still challenging to develop X-ray detectors with fast response, high sensitivity, and stable direct conversion. In this study, we fabricated a fast-response X-ray detector based on a nanocrystalline Ga2O3 thin film, prepared by electron beam evaporation without a high-temperature post-annealing process. The structure characterization results show that Ga2O3 films were nanocrystalline, and a coplanar metal/semiconductor/metal (MSM)-structured X-ray detector was fabricated. The detection sensitivity reached up to 138.80 μCmGyair−1 cm−3 (at 50 V bias voltage), and the dark current was 50 pA (at 10 V bias voltage). In addition, the rise time and fall time of the transient photocurrent were measured (