Multi-barrier inter-layer tunnel field-effect transistor

The resonant tunneling characteristics of the inter-layer tunnel field-effect transistor (ITFET) within 2D van der Waals' materials can be made sharper by the use of multiple (m) intermediate well and tunnel barrier layers within a “mlTFET” variation. Ballistic quantum transport simulations are used to obtain the resonance characteristics in an MoS2 based-system, for specificity. Circuit simulations illustrate how the sharper resonance can lead to lower operating voltages and, thus, power, thereby improving the circuit performance.