Effects of Mn-Doping on the Properties of BaBi4Ti4O15 Bismuth Layer Structured Ceramics

Bismuth-layer-structured (Ba1−x Mn x )Bi4Ti4O15 (0.0 ≤ x ≤ 0.8) ceramics were prepared by a Sol–Gel method. The effects of the amount of Mn-doped on the phase structure, the dielectric as well as piezoelectric properties of BaBi4Ti4O15 ceramics were studied. The X-ray diffraction results revealed that the introduction of Mn resulting in distortion of lattice, which contributes to the crystallization of the layered structure grains. The densification, dielectric and piezoelectric properties of the (Ba1−x Mn x )Bi4Ti4O15 ceramics were significantly promoted by the Mn substitution of Ba. When the value of doping amount Mn is 0.4, the (Ba0.6Mn0.4)Bi4Ti4O15 ceramic exhibited a high piezoelectric constant (d 33 = 7.5 pC/N), a big relatively dielectric constant (e r = 764.26) and a small dielectric loss (tanδ = 0.0124).