Ion Profiling of Implanted Dopants in Si (001) with Excess Vacancy Concentration

Medium energy ion scattering (MEIS) was used to study the distribution of ion‐implanted As and Sb dopants in Si with excess vacancies and SIMOX substrates as well as the effects of thermal treatments. Extra vacancies in Si were generated by N or O pre‐implantation at high temperatures. Under these conditions, effects related to the different chemical nature of the pre‐implanted species are expected. The annealing behavior and depth distribution of the Sb atoms differed for O compared to N pre‐implanted Si. After long annealing times, the oxygen containing samples (SIMOX and O pre‐implanted Si) presented higher substitutionality. The nitrogen pre‐implanted Si presented the lowest amount of segregated Sb and a more uniform dopant distribution. For both N and O pre‐implanted samples a large dopant loss to the atmosphere during annealing was observed.