Structure and scintillation properties of CsI(Tl) films on Si single crystal substrates

Abstract CsI(Tl) scintillation films fabricated on glass substrates are widely applied for X-ray imaging because their ability to grow in micro-columnar structure and proper emission wavelength matching CCD cameras. But the coupling process between the CsI(Tl) films and Si-based photo detector would cause coupling loss. In this work, CsI(Tl) films were deposited on the orienting Si substrates and the Si substrates covered by the pre-deposited CsI nanolayers. Structure and scintillation properties of films were examined by using scanning electron microscopy, X-ray diffraction, photoluminescence and radioluminescent spectrum. The films deposited on the orienting Si substrates show the micro-columnar morphology with perfect single crystalline structure and the photoluminescence spectra with bimodal distribution. The performances of the films prepared on the pre-deposited CsI nanolayer, containing micro-columns structure and the light yield are improved.