Ideal electrical transport using technology-ready graphene

Producing and manipulating graphene on fab-compatible scale, while maintaining its remarkable carrier mobility, is key to finalize its technological application. We show that a large-scale approach (CVD growth on Cu followed by polymer-mediated semi-dry transfer) yields single-layer graphene crystals undistinguishable, in terms of electronic transport, from micro-mechanically exfoliated flakes. hBN is used to encapsulate the graphene crystals $-$ without taking part to their detachment from the growth catalyst $-$ and study their intrinsic properties in field-effect devices. At room temperature, the electron-phonon coupling sets the mobility to $\sim1.3 \times10^5$ cm$^2$/Vs at $\sim10^{11}$ cm$^{-2}$ concentration. At cryogenic temperatures, the mobility ($ > 6\times10^5$ cm$^2$/Vs at $\sim10^{11}$ cm$^{-2}$) is limited by the devices' physical edges, and charge fluctuations $ < 7\times10^9$ cm$^{-2}$ are detected. Under perpendicular magnetic fields, we observe early onset of Landau quantization ($B\sim50$ mT) and signatures of electronic correlation, including the fractional quantum Hall effect.