Trapped carrier dynamics in dielectric nanodots

Abstract Trapped carrier dynamics has been studied on Si 3 N 4 nanodots grown by plasma enhanced chemical vapor deposition (PECVD) and on SiO 2 nanodots grown by pulsed laser deposition (PLD) on Si wafers. Carrier dynamics can be explained with a model based on Coulomb interaction with the boundary conditions of the nanodot structure. The trapped charge can be estimated quantitatively from the measured trap dynamics, elucidating the electrostatic effect in a small dielectric system.