Use of reflectance spectroscopy for in-situ monitoring of InP/InGaAsP films grown by MOVPE

In this paper we report the use of multiwavelength reflectance spectroscopy to obtain the first in-situ optical measurements of InGaAsP/InP-based growth. Broadband reflectometry eliminates the instrumental and alignment complexities associated with spectroellipsometry and laser-based techniques, making it more readily adaptable to the quartz reactor and higher pressure environment in MOVPE.