A DC-DC converter utilizing $\beta-\text{Ga}_{2}\mathrm{O}_{3}$ Schottky barrier diode

The $\beta-\text{Ga}_{2}\mathrm{O}_{3}$ Schottky barrier diode (SBD) is fabricated and actualized a breakdown voltage of 472 V. A SPICE model for $\beta-\text{Ga}_{2}\mathrm{O}_{3}$ Sbd is derived from experimental results and applied to DC-DC converter circuit simulation. Then the $\beta-\text{Ga}_{2}\mathrm{O}_{3}$ SBD is implemented in a DC-DC converter circuit and acquired the conversion efficiency of 94.8%, indicating the great potential of Ga 2 O 3 -based devices and circuits.