Investigation of the 2D–3D transition of the band gap renormalization in GaAs

We have analyzed the band gap renormalization due to many body effects in electron-hole plasmas in GaAs in the transition region between two-dimensional quantum wells and bulk material. The band gap renormalization depends strongly on the well widths. A transition of the band gap renormalization from the two-dimensional behavior observed for quantum wells with widths Lz<8 nm to the behavior of bulk GaAs occurs for well widths between 10 and 20 nm.