Silicon chemical mechanical polishing technology

(57) Abstract: chemical mechanical polishing of substrates, in particular, to provide a technique for chemical mechanical polishing of silicon. To improve the chemical mechanical polishing of the silicon layer such as polycrystalline silicon, first chemical mechanical polishing the silicon layer with an oxide polishing slurry. Then, until the substrate is planarized, chemically and mechanically polishing the silicon layer in the silicon polishing slurry. Substrate 10 is placed on the semiconductive layer such as a silicon wafer 12, it includes an insulating layer 14 such as silicon dioxide. The insulating layer 14 is either patterned or disposed patterned lower layer and provides an outer surface of the non-planar. Polysilicon layer 16 is disposed so as to cover the insulating layer 14. As shown, to reproduce the outer surface almost exactly under the structure of the insulating layer 14 of polysilicon layer 16, to form a series of peaks and valleys as the exposed surface of the substrate is non-planar.